1 www.kersemi.com fqd2n60c / FQU2N60C n-cha nne l qfet ? mosfet fqd2n60c / FQU2N60C n-channel qfet ? mosfet 600 v, 1.9 a, 4.7 ? features ? 1.9 a, 600 v , r ds(on) = 4.7 ? (max .) @ v gs = 10 v , i d = 0.95 a ? low g ate c harge ( t yp . 8. 5 nc) ? low crss ( t yp . 4.3 pf) ? 100% a v alanche t ested ? rohs compliant description absolute maximum ratings thermal characteristics * when mounted on the minimum pad size recommended (pcb mount) ! !! ! ! !! ! ! !! ! ? ?? ? ! !! ! ! !! ! ! !! ! ? ?? ? s d g i-pak d-pak symbol parameter fqd2n60c / FQU2N60C unit v dss drain-source voltage 600 v i d drain current - continuous (t c = 25c) 1.9 a - continuous (t c = 100c) 1.14 a i dm drain current - pulsed (note 1) 7.6 a v gss gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 120 mj i ar avalanche current (note 1) 1.9 a e ar repetitive avalanche energy (note 1) 4.4 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d power dissipation (t a = 25c)* 2.5 w power dissipation (t c = 25c) 44 w - derate above 25c 0.35 w/c t j , t stg operating and storage temperature range -55 to +150 c t l maximum lead temperature for soldering purposes, 1/8 " from case for 5 seconds 300 c symbol parameter fqd2n60c / FQU2N60C unit r jc thermal resist ance, junction-to-case , max. 2.87 c / w r ja thermal resistance, junction-to-ambient* 50 c / w r ja thermal resist ance, junction-to-ambient , max. 110 c / w g s d g d s these n-channel enhancement mode power field effect transistors are produced using corise semiconductor?s proprietary, planar stripe, dmos technology. this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. these devices are well suited for high efficiency switch mode power supply.
2 electrical characteristics t c = 25c unless otherwise noted notes: 1. repetitive rating : pulse width limited by maximum junction temperature 2. l = 56mh, i as = 2a, v dd = 50v, r g = 25 ?, starting t j = 25c 3. i sd 2a, di/dt 200a/ s, v dd bv dss, starting t j = 25c 4. pulse test : pulse width 300 s, duty cycle 2% 5. essentially independent of operating temperature device marking device package reel size tape width quantity fqd2n60c fqd2n60c d-pak - - fdu2n60c fdu2n60c i-pak - - symbol parameter test conditions min typ max unit off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 a 600 -- -- v ? bv dss / ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25c -- 0.6 -- v/c i dss zero gate voltage drain current v ds = 600 v, v gs = 0 v -- -- 1 a v ds = 480 v, t c = 125c -- -- 10 a i gssf gate-body leakage current, forward v gs = 30 v, v ds = 0 v -- -- 100 na i gssr gate-body leakage current, reverse v gs = -30 v, v ds = 0 v -- -- -100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250 a2 . 0- -4 . 0v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 0.95 a -- 3.6 4.7 ? g fs forward transconductance v ds = 40 v, i d = 0.95 a (note 4) -- 5.0 -- s dynamic characteristics c iss input capacitance v ds = 25 v, v gs = 0 v, f = 1.0 mhz -- 180 235 pf c oss output capacitance -- 20 25 pf c rss reverse transfer capacitance -- 4.3 5.6 pf switching characteristics t d(on) turn-on delay time v dd = 300 v, i d = 2 a, r g = 25 ? (note 4, 5) -- 9 28 ns t r turn-on rise time -- 25 60 ns t d(off) turn-off delay time -- 24 58 ns t f turn-off fall time -- 28 66 ns q g total gate charge v ds = 480 v, i d = 2 a, v gs = 10 v (note 4, 5) -- 8.5 12 nc q gs gate-source charge -- 1.3 -- nc q gd gate-drain charge -- 4.1 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- 1.9 a i sm maximum pulsed drain-source diode forward current -- -- 7.6 a v sd drain-source diode forward voltage v gs = 0 v, i s = 1.9 a -- -- 1.4 v t rr reverse recovery time v gs = 0 v, i s = 2 a, di f / dt = 100 a/ s (note 4) -- 230 -- ns q rr reverse recovery charge -- 1.0 -- c fqd2n60c / FQU2N60C n-cha nne l qfet ? mosfet www.kersemi.com
3 figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate voltage variation vs. source current and temperatue figure 5. capacitance characteristics figure 6. gate charge characteristics 10 -1 10 0 10 1 10 -2 10 -1 10 0 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v 5.5 v 5.0 v bottom : 4.5 v notes : $ 1. 250 s pulse test 2 . t c = 25 % i d , drain current [a] v ds , drain-source voltage [v] 24681 0 10 -1 10 0 10 1 150 o c 25 o c -55 o c notes : $ 1. v ds = 40v 2. 250 s pulse test i d , drain current [a] v gs , gate-source voltage [v] 012345 0 2 4 6 8 10 12 v gs = 20v v gs = 10v note : t $ j = 25 % r ds(on) [ ! ], drain-source on-resistance i d , drain current [a] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 10 -1 10 0 150 % notes : $ 1. v gs = 0v 2. 250 s pulse test 25 % i dr , reverse drain current [a] v sd , source-drain voltage [v] 10 -1 10 0 10 1 0 50 100 150 200 250 300 350 400 450 500 c iss = c gs + c gd (c ds = shorted) c os s = c ds + c gd c rss = c gd notes ; $ 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitance [pf] v ds , drain-source voltage [v] 024681 0 0 2 4 6 8 10 12 v ds = 300v v ds = 120v v ds = 480v note : i $ d = 2a v gs , gate-source voltage [v] q g , total gate charge [nc] fqd2n60c / FQU2N60C n-cha nne l 4 ) ( 7 ? mosfet www.kersemi.com
4 figure 7. breakdown voltage variation figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature figure 11. typical drain current slope figure 12. typical drain-source voltage vs. gate resistance slope vs. gate resistance -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 notes : $ 1. v gs = 0 v 2. i d = 250 a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0. 0 0. 5 1. 0 1. 5 2. 0 2. 5 3. 0 notes : $ 1. v gs = 10 v 2. i d = 0.95 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 100 ms dc 10 ms 1 ms 100 s operation in this area is limited by r ds(on) notes : $ 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] 25 50 75 100 125 150 0.0 0.4 0.8 1.2 1.6 2.0 i d , drain current [a] t c , case temperature [ ] % 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -1 10 0 notes : $ 1. z " jc (t) = 2.87 /w max. % 2. d uty factor, d =t 1 /t 2 3. t jm - t c = p dm * z " jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z " jc (t), thermal response t 1 , square w ave pulse duration [sec] t 1 p dm t 2 fqd2n60c / FQU2N60C n-cha nne l 4 ) ( 7 ? mosfet www.kersemi.com
5 gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms charge v gs 10v q g q gs q gd 3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut charge v gs 10v q g q gs q gd 3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut v gs v ds 10% 90% t d( on) t r t on t off t d(off) t f v dd 10v v ds r l dut r g v gs v gs v ds 10% 90% t d( on) t r t on t off t d(off) t f v dd 10v v ds r l dut r g v gs e as =li as 2 ---- 2 1 -------------------- bv dss -v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time 10v dut r g l i d t p e as =li as 2 ---- 2 1 e as =li as 2 ---- 2 1 ---- 2 1 -------------------- bv dss -v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time 10v dut r g l l i d i d t p fqd2n60c / FQU2N60C n-cha nne l qfet ? mosfet www.kersemi.com
6 dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period -------------------------- fqd2n60c / FQU2N60C n-cha nne l qfet ? mosfet www.kersemi.com
d-pak fqd2n60c / FQU2N60C n-cha nne l qfet ? mosfet 7 www.kersemi.com
i-pak fqd2n60c / FQU2N60C n-cha nne l qfet ? mosfet 8 www.kersemi.com
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